IRFS4010PBF datasheet(2/10 Pages) IRF

2 / 10 page

IRFS/SL4010PbF

www.irf.com

Notes:

Repetitive rating; pulse width limited by max. junction

temperature.

Limited by TJmax, starting TJ = 25°C, L = 0.057mH

RG = 25

Ω, IAS = 106A, VGS =10V. Part not recommended for use

above this value .

ISD ≤ 106A, di/dt ≤ 1319A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.

Pulse width ≤ 400μs; duty cycle ≤ 2%.

Coss eff. (TR) is a fixed capacitance that gives the same charging time

as Coss while VDS is rising from 0 to 80% VDSS.

Coss eff. (ER) is a fixed capacitance that gives the same energy as

Coss while VDS is rising from 0 to 80% VDSS.

When mounted on 1" square PCB (FR-4 or G-10 Material). For recom

mended footprint and soldering echniques refer to application note #AN-994.

Rθ is measured at TJ approximately 90°C

RθJC value shown is at time zero

Static @ TJ = 25°C (unless otherwise specified)

Symbol

Parameter

Min. Typ. Max. Units

V(BR)DSS

Drain-to-Source Breakdown Voltage

100

–––

ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient

–––

0.10

–––

V/°C

RDS(on)

Static Drain-to-Source On-Resistance

–––

3.9

4.7

VGS(th)

Gate Threshold Voltage

2.0

–––

4.0

IDSS

Drain-to-Source Leakage Current

–––

250

IGSS

Gate-to-Source Forward Leakage

–––

100

Gate-to-Source Reverse Leakage

–––

-100

RG(int)

Internal Gate Resistance

–––

2.0

–––

Dynamic @ TJ = 25°C (unless otherwise specified)

Symbol

Parameter

Min. Typ. Max. Units

gfs

Forward Transconductance

189

–––

Total Gate Charge

–––

143

215

Qgs

Gate-to-Source Charge

–––

Qgd

Gate-to-Drain ("Miller") Charge

–––

Qsync

Total Gate Charge Sync. (Qg - Qgd)

–––

td(on)

Turn-On Delay Time

–––

Rise Time

–––

td(off)

Turn-Off Delay Time

–––

100

–––

Fall Time

–––

Ciss

Input Capacitance

–––

9575

–––

Coss

Output Capacitance

–––

660

–––

Crss

Reverse Transfer Capacitance

–––

270

–––

Coss eff. (ER) Effective Output Capacitance (Energy Related)h ––– 757 –––

Coss eff. (TR) Effective Output Capacitance (Time Related)g

–––

1112

–––

Diode Characteristics

Symbol

Parameter

Min. Typ. Max. Units

Continuous Source Current

(Body Diode)

ISM

Pulsed Source Current

(Body Diode)

VSD

Diode Forward Voltage

–––

1.3

trr

Reverse Recovery Time

–––

TJ = 25°C

VR = 85V,

–––

TJ = 125°C

IF = 106A

Qrr

Reverse Recovery Charge

–––

210

–––

TJ = 25°C

di/dt = 100A/μs

–––

268

–––

TJ = 125°C

IRRM

Reverse Recovery Current

–––

5.3

–––

TJ = 25°C

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Conditions

VDS = 25V, ID = 106A

ID = 106A

VGS = 20V

VGS = -20V

MOSFET symbol

showing the

VDS = 50V

Conditions

VGS = 10V f

VGS = 0V

VDS = 50V

ƒ = 1.0MHz See Fig.5

VGS = 0V, VDS = 0V to 80V hSee Fig.11

VGS = 0V, VDS = 0V to 80V g

TJ = 25°C, IS = 106A, VGS = 0V f

integral reverse

p-n junction diode.

Conditions

VGS = 0V, ID = 250μA

Reference to 25°C, ID = 5mA

VGS = 10V, ID = 106A f

VDS = VGS, ID = 250μA

VDS = 100V, VGS = 0V

VDS = 100V, VGS = 0V, TJ = 125°C

ID = 106A

RG = 2.7Ω

VGS = 10V f

VDD = 65V

ID = 106A, VDS =0V, VGS = 10V

–––

μA

180

720

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