PYA28C010 datasheet(1/15 Pages) PYRAMID

No de pièce	PYA28C010

Description	Access Times of 120, 150, 200, and 250ns Single 5V짹10% Power Supply

PDF	15 Pages

Scroll/Zoom	100%

Fabricant	PYRAMID [Pyramid Semiconductor Corporation]

Site Internet	http://www.pyramidsemiconductor.com

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Document # EEPROM103 REV 03

Revised July 2014

PYA28C010

128K x 8 EEPROM

FEATURES

Access Times of 120, 150, 200, and 250ns

Single 5V±10% Power Supply

Simple Byte and Page Write

Low Power CMOS:

- 60 mA Active Current

- 500 µA Standby Current

Fast Write Cycle Times

Software Data Protection

Fully TTL Compatible Inputs and Outputs

Endurance:

- 10,000 Cycles/byte

- 100,000 Cycles/page

Data Retention: 100 Years

Available in the following package:

– 32-Pin 600 mil Ceramic DIP

– 32-Pin Ceramic LCC (450x550 mils)

– 32-Pin Solder Seal Flatpack

– 44-Pin Ceramic LCC (650x650 mils)

FUnCTIOnAL BLOCk DIAgRAM

PIn COnFIgURATIOn

DIP (C10)

DESCRIPTIOn

The PYA28C010 is a 5 Volt 128Kx8 EEPROM using float-

ing gate CMOS Technology. The device supports 64-byte

page write operation. The PYA28C010 features DATA and

Toggle Bit Polling as well as a system software scheme

used to indicate early completion of a Write Cycle. The

devicealsoincludesuser-optionalsoftwaredataprotection.

Data Retention is 100 Years. The device is available in

a 32-Pin 600 mil wide Ceramic DIP, 32-Pin LCC, 32-Pin

Solder Seal Flatpack and 44-Pin Ceramic LCC.

LCC (L6)

Numéro de pièce similaire - PYA28C010

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Pyramid Semiconductor C...	PYA28C16	667Kb / 10P	Access Times of 150, 200, 250 and 350ns Single 5V짹10% Power Supply
	PYA28C16-15CWM	667Kb / 10P	Access Times of 150, 200, 250 and 350ns Single 5V짹10% Power Supply
	PYA28C16-15CWMB	667Kb / 10P	Access Times of 150, 200, 250 and 350ns Single 5V짹10% Power Supply
	PYA28C16-15LM	667Kb / 10P	Access Times of 150, 200, 250 and 350ns Single 5V짹10% Power Supply
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Description similaire - PYA28C010

Fabricant	No de pièce	Fiches technique	Description
Pyramid Semiconductor C...	PYA28C16	667Kb / 10P	Access Times of 150, 200, 250 and 350ns Single 5V짹10% Power Supply
	PYA28C16B	663Kb / 10P	Access Times of 150, 200, 250 and 350ns Byte Write Cycle Time - 10 ms Maximum
	PYA28C64	676Kb / 10P	Access Times of 150, 200, 250 and 350ns Fast Byte Write (200us or 1 ms)
	PYA28C64B	717Kb / 11P	Access Times of 150, 200, 250 and 350ns Software Data Protection
	PYA28C256	796Kb / 14P	Access Times of 150, 200, 250 and 350ns Software Data Protection
	PYA28HC256	798Kb / 15P	Access Times of 70, 90 and 120ns Software Data Protection
	PYX28HC64	717Kb / 11P	Access Times of 70, 90, and 120ns Software Data Protection
Integrated Device Techn...	IDT6116SA	87Kb / 11P	High-speed access and chip select times
Micross Components	AS8SLC128K32	141Kb / 10P	Fast Access Times of 10 to 25ns
M/A-COM Technology Solu...	M02067	414Kb / 20P	Rise and fall times <150 ps

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