P4C1981 datasheet(4/13 Pages) PYRAMID

4 / 13 page

P4C1981/1981L, P4C1982/1982L

Page 4 of 13

Document # SRAM114 REV B

Sym.

Parameter

Unit

-10

-12

-15

-20

-25

-35

-45

Min Max Min Max Min Max Min Max Min Max Min Max Min Max

Read Cycle Time

Address Access

Time

Chip Enable

Access Time

Output Hold from

2222

Address Change

Chip Enable to

2222

Output in Low Z

Chip Disable to

Output in High Z

Output Enable

Low to Data Valid

OLZ

Output Enable to

2222

Output in Low Z

OHZ

Output Disable to

Output in High Z

Chip Enable to

0000

Power Up Time

Chip Disable to

Power Down Time

AC CHARACTERISTICS—READ CYCLE

CC = 5V ± 10%, All Temperature Ranges)

(2)

READ CYCLE NO.1 (OE

OE controlled)(5)

Notes:

5. WE is HIGH for READ cycle.

6. CE

1, CE2 and OE are LOW for READ Cycle.

7. OE is LOW for the cycle.

8. ADDRESS must be valid prior to or coincident with, CE

1, and

2 transition LOW.

9. Transition is measured ±200mV from steady state voltage

prior to change, with loading as specified in Figure 1.

10. Read Cycle Time is measured from the last valid address to

the first transitioning address.

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