P3C1256L datasheet(5/11 Pages) PYRAMID

No de pièce	P3C1256L

Description	LOW POWER 32K x 8 STATIC CMOS RAM

PDF	11 Pages

Scroll/Zoom	100%

Fabricant	PYRAMID [Pyramid Semiconductor Corporation]

Site Internet	http://www.pyramidsemiconductor.com

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P3C1256L - 32K x 8 STATIC CMOS RAM

Page 5

Document # SRAM143 REV A

AC CHARACTERISTICS—WRITE CyCLE

(Over Recommended Operating Temperature & Supply Voltage)

Symbol Parameter

-55

-70

-85

Unit

Min

Max

Min

Max

Min

Max

Write Cycle Time

Chip Enable Time to End of Write

Address Valid to End of Write

Address Setup Time

Write Pulse Width

Address Hold Time

Data Valid to End of Write

Data Hold Time

Write Enable to Output in High Z

Output Active from End of Write

TIMIng WAVEFORM OF WRITE CyCLE nO. 1 (WE COnTROLLED)(10,11)

Notes:

10. CE and WE must be LOW for WRITE cycle.

11. OE is LOW for this WRITE cycle to show t

WZ and tOW.

12. If CE goes HIGH simultaneously with WE HIGH, the output remains

in a high impedance state

13. Write Cycle Time is measured from the last valid address to the first

transitioning address.

P3C1256L Fiches technique(PDF) 5 Page - Pyramid Semiconductor Corporation