BFG35_15 datasheet(2/14 Pages) PHILIPS

2 / 14 page

1999 Aug 24

NXP Semiconductors

Product specification

NPN 4 GHz wideband transistor

BFG35

DESCRIPTION

NPN planar epitaxial transistor

mounted in a plastic SOT223

envelope, intended for wideband

amplifier applications. It features high

output voltage capabilities.

PINNING

DESCRIPTION

1emitter

2base

3emitter

collector

Fig.1 SOT223.

lfpage

123

MSB002 - 1

Top view

QUICK REFERENCE DATA

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

Note

1. Ts is the temperature at the soldering point of the collector tab.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

VCEO

collector-emitter voltage

open base



DC collector current



150

Ptot

total power dissipation

up to Ts =135 C (note 1)



hFE

DC current gain

IC =100 mA; VCE =10V; Tj =25 C25



transition frequency

IC =100 mA; VCE =10V;

f= 500MHz; Tamb =25 C



GHz

GUM

maximum unilateral power gain IC =100 mA; VCE =10V;

f= 500MHz; Tamb =25 C



IC =100 mA; VCE =10V;

f= 800MHz; Tamb =25 C



output voltage

IC =100 mA; VCE =10V;

dim = 60 dB; RL =75 ;

f(p+qr) = 793.25 MHz; Tamb =25 C



750



SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VCBO

collector-base voltage

open emitter



VCEO

collector-emitter voltage

open base



VEBO

emitter-base voltage

open collector



DC collector current



150

Ptot

total power dissipation

up to Ts =135 C (note 1)



Tstg

storage temperature

65

+150

C

junction temperature



175

C

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