RFSW6032 datasheet(3/9 Pages) RFMD

3 / 9 page

RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421

DS140821

For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.

The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of

third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended

application circuitry and specifications at any time without prior notice.

3 of 9

RFSW6032

Parameter

Specification

Unit

Condition

Min

Typ

Max

General Performance -

Continued

Electrical Specifications, TA = 25°C, VDD = 3V to 5V

900MHz Third Harmonic

-102

-85

dBc

2000MHz Second Harmonic

-99

-80

dBc

Pin = 33dBm

2000MHz Third Harmonic

-90

-77

dBc

Input IP3

dBm

2GHz, 21dBm per tone, 1MHz spacing

Max Operational Input Power

dBm

Power Supply

VDD Supply Current

100

μA

CTL1, CTL2 – Control Voltage High

1.3

2.7

CTL1, CTL2 – Control Voltage Low

0.45

Control Current

μA

Switching Speed, One RF Port to

Another

Turn On Time

Power-up / Power-down Sequence and Operation Controls

Power-up / Power-down

Sequence for Power-up and Power-down from Supply that is Connected to VDD Pin

Power-up

Turn on VDD, then C1 and C2, then (20μs or greater), apply RF signal

Power-down

Turn off RF signal, then C1 and C2, turn off VDD

Switching Ports

Turn off RF signal, then change C1 and C2 state, then (5μs or greater). Turn on RF signal

Switch is controlled by C1 and C2

Mode

RF1-ANT

High

Low

RF2-ANT

Low

High

RF3-ANT

High

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