V 2.00

Handling Precautions

Permanent damage to the MASW8000 may occur if the fol-

lowing precautions are not adhered to:

A. Cleanliness — The MASW8000 should be handled in a

clean environment. DO NOT attempt to clean unit after

the MASW8000 is installed.

B. Static Sensitivity — All chip handling equipment and per-

sonnel should be DC grounded.

C. Transient — Avoid instrument and power supply transients

while bias is applied to the MASW8000. Use shielded

signal and bias cables to minimize inductive pick-up.

D. Bias —Apply voltage to either of the complementary con-

trol port A1/B2 or A2/B1 only when the other is grounded.

Neither port should be allowed to ”float”.

E.General Handling — It is recommended that the

MASW8000 chip be handled along the long side of the

die with a sharp pair of bent tweezers. DO NOT touch the

surface of the chip with fingers or tweezers.

Mounting

The MASW8000 is back-metallized with Pd/Ni/Au

(100/1,000/10,000Å) metallization. It can be die-mounted

with AuSn eutectic preforms or with thermally conductive

epoxy. The package surface should be clean and flat before

attachment.

Eutectic Die Attach:

A. A 80/20 gold/tin preform is recommended with a work

surface temperature of approximately 255°C and a tool

temperature of 265°C. When hot 90/10 nitrogen/hydrogen

gas is applied, tool tip temperature should be approxi-

mately 290°C.

B. DO NOT expose the MASW8000 to a temperature

greater than 320°C for more than 20 seconds. No more

than 30 seconds of scrubbing should be required for

attachment.

Epoxy Die Attach:

A. Apply a minimum amount of epoxy and place the

MASW8000 into position. A thin epoxy fillet should be

visible around the perimeter of the chip.

B. Cure epoxy per manufacturer’s recommended schedule.

C. Electrically conductive epoxy may be used but is not

required.

Wire Bonding

A. Ball or wedge bond with 1.0 mil diameter pure gold wire.

Thermosonic wirebonding with a nominal stage tempera-

ture of 150°C and a ball bonding force of 40 to 50 grams

or wedge bonding force of 18 to 22 grams is recommend-

ed.Ultrasonic energy and time should be adjusted to the

minimum levels to achieve reliable wirebonds.

B. Wirebonds should be started on the chip and terminat-

ed on the package. GND bonds should be as short as

possible; at least three and no more than four bond

wires or two 3-mil ribbons from ground pads to package

are recommended.

Maximum Ratings

A. Control Voltage (A1/B2 or A2/B1):–8.5 Vdc

B. Max Input RF Power:

+34 dBm

C. Storage Temperature:

–65°C to +175°C

D. Max Operating Temperature:

+175°C

BondPad Dimensions

Inches (mm)

RF:

0.004 x 0.004

(0.100 x 0.100)

RF1, RF2:

0.004 x 0.004

(0.100 x 0.100)

A1, A2, B1, B2:

0.004 x 0.004

(0.100 x 0.100)

PC1, PC2

0.004 x 0.004

(0.100 x 0.100)

GND1, GND2:

0.005 x 0.009

(0.110 x 0.225)

Truth Table****

Control Inputs

Condition Of Switch

A1/B2

A2/B1

RF1

RF2

On

Off

Off

On

****For normal SPDT operation A1 is connected to B2 and

A2 is connected to B1.

Die Size

Inches (mm)

0.046 x 0.036 x 0.010

(1.15 x 0.90 x 0.25)