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RF2884 Fiches technique(PDF) 2 Page - RF Micro Devices

No de pièce RF2884
Description  BROADBAND LOW NOISE AMPLIFIER
PDF  6 Pages
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Fabricant  RFMD [RF Micro Devices]
Site Internet  http://www.rfmd.com
Logo RFMD - RF Micro Devices

RF2884 Fiches technique(HTML) 2 Page - RF Micro Devices

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RF2884
DS20130228
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at ((+1) 336-678-5570 or ssales-support@rfmd.com.
Absolute Maximum Ratings
Parameter
Rating
Unit
Supply Voltage
-0.5 to +5.0
V
DC
Input RF Level
+6.0
dBm
Operating Temperature
-40 to +85
°C
Storage Temperature
-40 to +150
°C
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Overall
TAMB=-20°C to +85°C, VCC=2.65VDC to
3.0VDC (unless otherwise specified)
Frequency Range
45
869 to 894
2500
MHz
Cellular Low Noise Amplifier
Frequency
869
894
MHz
HIGH GAIN MODE
GC<0.8V
Gain
13.25
15.0
16.25
dB
Noise Figure
1.2
1.7
dB
1.7dB max, -20°C to +65°C
1.2
1.85
dB
1.85dB max, -20°C to +85°C
Input IP3
-2.0
+4.0
dBm
Current
6.0
8.5
mA
S11
-15.5
-10.5
dB
S22
-15.5
-9.5
dB
Input P1dB
-16.0
-10.0
dBm
Reverse Isolation
-20
dB
Single Tone IIP2
+7.0
+11.0
F1=440MHz, ST IIP2=2*PIN-POUT+Gain
Single Tone IIP3
-8.6
-6.5
F1=293.3MHz,
ST IIP3=PIN-(POUT+Gain-PIN)/2
Double Tone IIP2
-1.0
+5.0
F1=835MHz, F2=1715MHz,
TT IIP2=PIN1+PIN2-POUT +Gain
Double Tone IIP3
-6.3
-3.5
F1=835MHz, F2=2550MHz,
TT IIP3=PIN-(POUT-Gain-PIN)/2
BYPASS MODE
GC>1.8V
Gain
-7.0
-4.0
-2.0
dB
Input IP3
+20.0
dBm
Current
0.0
0.003
mA
S11
-11.5
-10.5
dB
S22
-10.5
-8.5
dB
FM LNA
Frequency Range
70
110
MHz
HIGH GAIN MODE
Gain
15.9
dB
Noise Figure
1.5
dB
Input IP3
+1
dBm
S11
-16
dB
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.



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