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HFS840 Fiches technique(PDF) 3 Page - SemiHow Co.,Ltd. |
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HFS840 Fiches technique(HTML) 3 Page - SemiHow Co.,Ltd. |
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3 / 7 page ![]() Typical Characteristics Figure 1. On Region Characteristics Figure 2. Transfer Characteristics Figure 3. On Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 10 -1 10 0 10 1 0 500 1000 1500 2000 C iss = Cgs + Cgd (Cds = shorted) C oss = Cds + Cgd C rss = Cgd * Note ; 1. V GS = 0 V 2. f = 1 MHz C rss C oss C iss V DS, Drain-Source Voltage [V] 0 5 10 15 20 25 30 0 2 4 6 8 10 12 V DS = 250V V DS = 100V V DS = 400V * Note : I D = 9.0 A Q G, Total Gate Charge [nC] |
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