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HFS730S Fiches technique(PDF) 3 Page - SemiHow Co.,Ltd. |
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HFS730S Fiches technique(HTML) 3 Page - SemiHow Co.,Ltd. |
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3 / 7 page ![]() V SD, Source-Drain Voltage [V] I D, Drain Current [A] V GS, Gate-Source Voltage [V] V DS, Drain-Source Voltage [V] Typical Characteristics Figure 1. On Region Characteristics Figure 2. Transfer Characteristics Figure 3. On Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 04 8 12 16 20 0 2 4 6 8 10 12 V DS = 200V V DS = 80V V DS = 320V Note : I D = 6.0A Q G, Total Gate Charge [nC] 10 -1 10 0 10 1 10 0 10 1 V GS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V Bottom : 5.0 V * Notes : 1. 250us Pulse Test 2. T C = 25 oC V DS, Drain-Source Voltage [V] |
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