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HFS5N80 Fiches technique(PDF) 3 Page - SemiHow Co.,Ltd. |
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HFS5N80 Fiches technique(HTML) 3 Page - SemiHow Co.,Ltd. |
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3 / 7 page ![]() 10 -1 10 0 10 1 0 400 800 1200 1600 2000 2400 C iss = Cgs + Cgd (Cds = shorted) C oss = Cds + Cgd C rss = Cgd * Notes : 1. V GS = 0 V 2. f = 1 MHz C rss C oss C iss V DS, Drain-Source Voltage [V] Typical Characteristics 0 6 12 18 24 30 36 0 2 4 6 8 10 12 V DS = 400V V DS = 160V V DS = 640V * Note : I D = 5.0A Q G, Total Gate Charge [nC] Figure 1. On Region Characteristics Figure 2. Transfer Characteristics Figure 3. On Resistance Variation Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics I D, Drain Current [A] V DS, Drain-Source Voltage [V] V GS, Gate-Source Voltage [V] V SD, Source-Drain voltage [V] |
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