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STS8217 Fiches technique(PDF) 2 Page - SamHop Microelectronics Corp.

No de pièce STS8217
Description  Super high dense cell design for low RDS(ON).
PDF  7 Pages
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Fabricant  SAMHOP [SamHop Microelectronics Corp.]
Site Internet  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STS8217 Fiches technique(HTML) 2 Page - SamHop Microelectronics Corp.

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ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
STS8217
Ver 1.1
www.samhop.com.tw
May,07,2012
2
Symbol
Min
Typ
Max
Units
BVDSS
24
V
1
IGSS
±10
uA
VGS(th)
0.5
V
RDS(ON)
Drain-Source On-State Resistance
IDSS
uA
Gate Threshold Voltage
VDS=VGS ,ID=1mA
VDS=20V , VGS=0V
VGS=±12V,VDS=0V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
OFF CHARACTERISTICS
Parameter
Conditions
Drain-Source Breakdown Voltage
VGS=0V,ID=250uA
ON CHARACTERISTICS
0.85
1.5
gFS
16
S
VSD
CISS
564
pF
COSS
188
pF
CRSS
174
pF
Qg
20
nC
71.2
nC
Qgs
88
nC
Qgd
81.6
tD(ON)
10.7
ns
tr
1.6
ns
tD(OFF)
4.8
ns
tf
ns
Gate-Drain Charge
VDS=10V,VGS=0V
SWITCHING CHARACTERISTICS
Gate-Source Charge
VDD=20V
ID=3.5A
VGS=4V
RGEN= 6 ohm
Total Gate Charge
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
VDS=5V,ID=3.5A
Input Capacitance
Output Capacitance
DYNAMIC CHARACTERISTICS
Forward Transconductance
Diode Forward Voltage
Reverse Transfer Capacitance
VGS=2.5V , ID=3.5A
m ohm
c
f=1.0MHz
c
VDS=20V,ID=7A,
VGS=4V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VGS=0V,IS=3A
0.81
1.2
V
Notes
a.Surface Mounted on FR4 Board,t < 10sec.
b.Pulse Test:Pulse Width < 10us, Duty Cycle < 1%.
c.Guaranteed by design, not subject to production testing.
_
_
_
20
27
VGS=3.1V , ID=3.5A
m ohm
16.5
18
m ohm
VGS=4.0V , ID=3.5A
15
16.5
m ohm
VGS=3.7V , ID=3.5A
15.5
17
15
14.5
13
13.5



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