SDF07N50 datasheet(1/11 Pages) SAMHOP

No de pièce	SDF07N50

Description	Super high dense cell design for low RDS(ON).

PDF	11 Pages

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Fabricant	SAMHOP [SamHop Microelectronics Corp.]

Site Internet	http://www.samhop.com.tw

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S mHop Microelectronics C orp.

a

FEATURES

Super high dense cell design for low RDS(ON).

Rugged and reliable.

TO-220 and TO-220F Package.

N-Channel Enhancement Mode Field Effect Transistor

www.samhop.com.tw

Dec,24,2013

1

Details are subject to change without notice.

S

G

D

Ver 2.1

G D S

SDF SERIES

TO-220F

ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)

PRODUCT SUMMARY

VDSS

ID

RDS(ON) (

Ω) Typ

7A

500V

0.76 @ VGS=10V

Symbol

VDS

VGS

IDM

W

A

PD

°C

88

-55 to 175

ID

Units

Parameter

500

7

20

V

±30

TC=25°C

Gate-Source Voltage

Drain-Source Voltage

THERMAL CHARACTERISTICS

SDP07N50

Drain Current-Continuous

-Pulsed

a

A

Maximum Power Dissipation

Operating Junction and Storage

Temperature Range

TJ, TSTG

62.5

°C/W

Thermal Resistance, Junction-to-Ambient

R JA

TC=25°C

7

20

±30

SDF07N50

TC=100°C

A

4.9

44

W

TC=100°C

1.7

°C/W

Thermal Resistance, Junction-to-Case

R JC

a

EAS

Single Pulse Avalanche Energy

c

mJ

6

G D S

SDP SERIES

TO-220

29

15

62.5

5.1

SDP07N50

SDF07N50

ORDERING INFORMATION

Ordering Code

Package

Marking Code

Delivery Mode

RoHS Status

SDP07N50HZ

SDP07N50PZ

TO-220

SDP07N50

07N50

Tube

Halogen Free

Pb Free

SDF07N50HZ

SDF07N50PZ

TO-220F

SDF07N50

07N50

Tube

Halogen Free

Pb Free

Numéro de pièce similaire - SDF07N50

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