 |
Moteur de recherche de fiches techniques de composants électroniques |
|
|
Moteur de recherche de fiches techniques de composants électroniques |
|
LT1339C Fiches technique(PDF) 3 Page - Linear Technology |
|
|
|||||||||||||||||||||||||||||
LT1339C Fiches technique(HTML) 3 Page - Linear Technology |
|
|
3 / 20 page  3 LT1339 12VIN = VBOOST = 12V, VC = 2V, TS = 0V, VFB = VREF = 1.25V, CTG = CBG = 3000pF, TA = 25°C unless otherwise noted. ELECTRICAL C C HARA TERISTICS SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS Error Amplifier VFB Error Amplifier Reference Voltage Measured at Feedback Pin 1.242 1.250 1.258 V q 1.235 1.250 1.265 V IFB Feedback Input Current VFB = VREF q 0.1 0.5 1.0 µA gm Error Amplifier Transconductance q 1200 2000 3200 µmho AV Error Amplifier Voltage Gain q 1500 3000 V/V IVC Error Amplifier Source Current q 200 275 µA Error Amplifier Sink Current VFB – VREF = 500mV q 280 400 µA VVC Absolute VC Clamp Voltage Measured at VC Pin 3.5 V VSENSE Peak Current Limit Threshold Measured at Sense Inputs q 170 190 mV Average Current Limit Threshold (Note 4) Measured at Sense Inputs q 110 120 130 mV VIAVG Average Current Limit Threshold Measured at IAVG Pin 2.5 V Current Sense Amplifier AV Amplifier DC Gain Measured at IAVG Pin 15 V/V VOS Amplifier Input Offset Voltage 2V < VCMSENSE < 60V, q 0.1 mV SENSE+ – SENSE– = 5mV IB Input Bias Current Sink (VCMSENSE > 5V) q 45 75 µA Source (VCMSENSE = 0V) q 700 1200 µA Oscillator fO Operating Frequency, Free Run q 150 kHz Frequency Programming Error (Note 3) fO ≤ 150kHz q –5 5 % ICT Timing Capacitor Discharge Current LT1339C q 2.20 2.50 2.75 mA LT1339I q 2.10 2.50 2.75 mA VSYNC SYNC Input Threshold Rising Edge q 0.8 2.0 V fSYNC SYNC Frequency Range fSYNC ≤ 150kHz q fO 1.4fO Output Drivers VTG,BG Undervoltage Output Clamp 12VIN ≤ 8V q 0.4 0.7 V Standby Mode Output Clamp VRUN < 0.5V q 0.1 V VTG Top Gate On Voltage q 11.0 11.9 12.0 V Top Gate Off Voltage q 0.4 0.7 V tTGR Top Gate Rise Time q 130 200 ns tTGF Top Gate Fall Time q 60 140 ns VBG Bottom Gate On Voltage q 11.0 11.9 12.0 V Bottom Gate Off Voltage q 0.4 0.7 V tBGR Bottom Gate Rise Time q 70 200 ns tBGF Bottom Gate Fall Time q 60 140 ns Note 2: Supply current specification does not include external FET gate charge currents. Actual supply currents will be higher and vary with operating frequency, operating voltages and the type of external FETs used. See Application Information section. Note 3: Test condition: RCT = 16.9k, CCT = 1000pF. Note 4: Test Condition: VCMSENSE = 10V. The q denotes specifications which apply over the full operating temperature range. Note 1: Absolute maximum ratings are those values beyond which the life of a device may be impaired. |
|
|
Lien URL |
| ALLDATASHEET vous a-t-il été utile ? [ DONATE ] |
À propos de Alldatasheet | Publicité | Contactez-nous | Politique de confidentialité | Lien vers la fiche technique | Echange de liens | Fabricants All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
French ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
