BAS40 datasheet(1/5 Pages) TSC

No de pièce	BAS40

Description	Low VF SMD Schottky Barrier Diode

PDF	5 Pages

Scroll/Zoom	100%

Fabricant	TSC [Taiwan Semiconductor Company, Ltd]

Site Internet	http://www.taiwansemi.com

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- Metal-on-silicon schottky barrier

- Surface device type mounting

- Moisture sensitivity level 1

- Matte Tin(Sn) lead finish with Nickel(Ni) underplate

- Packing code with suffix "G" means

green compound (halogen-free)

- Case: SOT- 23, molded plastic

- Terminal: Matte tin plated, lead free,

solderable per MIL-STD-202, Method 208 guaranteed

- High temperature soldering guaranteed: 260

oC/10s

- Weight: 0.008g (approximately)

SYMBOL

UNIT

PD

mW

VRRM

V

VR

V

IFRM

mA

IO

mA

IFSM

A

RθJA

oC/W

TJ , TSTG

oC

SYMBOL

UNIT

Reverse Breakdown Voltage

V(BR)

V

IR

μA

Junction Capacitance

CJ

pF

Reverse Recovery Time

trr

ns

Notes : 1. Test Condition : 8.3ms single half sine-wave superimposed on rated load

Notes : 2. Valid provided that electrodes are kept at ambient temperature

Document Number: DS_S1412006

Version: F14

BAS40 / -04 / -05 / -06

Taiwan Semiconductor

Small Signal Product

Low VF SMD Schottky Barrier Diode

FEATURES

MECHANICAL DATA

MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS (TA=25℃ unless otherwise noted)

SOT-23

PARAMETER

VALUE

357

-65 to +125

Non-Repetitive Peak Forward Surge Current

PARAMETER

MIN

MAX

0.50

IR=10μA

IF=1mA

IF=10mA

IF=IR=10mA, RL=100Ω, IRR=1mA

Reverse Leakage Current

-0.2

VF

Forward Voltage

-5.0

-

V

40

-0.38

-

-1.00

IF=40mA

VR=30V

VR=1V, f=1.0MHz

200

40

200

0.6

Power Dissipation

Repetitive Peak Reverse Voltage

Reverse Voltage

Repetitive Peak Forward Current

Mean Forward Current

Junction and Storage Temperature Range

(Note 1)

(Note 2)

Thermal Resistance (Junction to Ambient)

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