SD103CWS datasheet(2/5 Pages) VISHAY

2 / 5 page

SD103AWS, SD103BWS, SD103CWS

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Vishay Semiconductors

Rev. 1.9, 25-Feb-13

Document Number: 85682

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TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

Fig. 1 - Typical Variation of Forward Current vs. Forward Voltage

Fig. 2 - Typical High Current Forward Conduction Curve

Fig. 3 - Typical Variation of Reverse Current at Various

Temperatures

Fig. 4 - Diode Capacitance vs. Reverse Voltage

ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

PART

SYMBOL

MIN.

TYP.

MAX.

UNIT

Leakage current

VR = 30 V

SD103AWS

5μA

VR = 20 V

SD103BWS

5μA

VR = 10 V

SD103CWS

5μA

Forward voltage drop

IF = 20 mA

370

IF = 200 mA

600

Diode capacitance

VR = 0 V, f = 1 MHz

Reverse recovery time

IF = IR = 50 mA to 200 mA,

recover to 0.1 IR

trr

18488

0.01

1000

100

0.1

0.4

0.6

0.8

1.0

0.2

VF - Forward Voltage (V)

18489

0.5

1.0

01.5

VF - Forward Voltage (V)

duty cycle = 2 %

tp = 300 ms

0.01

0.1

100

1000

10 15 20 25 30 35 40 45 50

V - Reverse Voltage (V)

20084

75 °C

50 °C

25 °C

100 °C

Tamb = 125 °C

18491

050

VR - Reverse Voltage (V)

100

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