DICE/DWF SPECIFICATION

2

RH1056

Linear Technology Corporation

1630 McCarthy Blvd., Milpitas, CA 95035-7417



LINEAR TECHNOLOGY CORPORATION 2006

LT 0606 • PRINTED IN USA

Wafer level testing is performed per the indicated specifications for dice. Considerable differences in performance can often be observed for dice versus

packaged units due to the influences of packaging and assembly on certain devices and/or parameters. Please consult factory for more information

on dice performance and lot qualifications via lot sampling test procedures.

Dice data sheet subject to change. Please consult factory for current revision in production.

I.D.No. 66-13-1056

Note 1: Dice are probe tested at 25°C to the limits shown. Final specs,

after assembly cannot be guaranteed at the die level due to yield loss and

assembly shifts. For absolute maximum ratrings, typical specifications,

performance curves and finished product specifications, please refer to the

standard product data sheet.

Note 2: For dice tested to tighter limits than those listed above and/or, lot

qualification based on sample lot assembly and testing, please contact LTC

Marketing.

and 20pA respectively at final test. JFETs sensitivity to light at wafer sort

requires a loose limit.

Note 5: Tested at a gain of “5”.

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNITS

Output Voltage Swing

±12

V

CMRR

Common Mode Rejection Ratio

86

dB

PSRR

Power Supply Rejection Ratio

VS = ±10V to ±18V

88

dB

SR

Slew Rate

(Note 5)

10

V/μs

Supply Current

6

mA

Rad Hard die require special handling as compared to standard IC chips.

Rad Hard die are susceptible to surface damage because there is no silicon

nitride passivation as on standard die. Silicon nitride protects the die surface

from scratches by its hard and dense properties. The passivation on Rad Hard

die is silicon dioxide that is much “softer” than silicon nitride.

LTC recommends that die handling be performed with extreme care so

as to protect the die surface from scratches. If the need arises to move

the die around from the chip tray, use a Teflon-tipped vacuum wand.

This wand can be made by pushing a small diameter Teflon tubing onto the

tip of a steel-tipped wand. The inside diameter of the Teflon tip should match

the die size for efficient pickup. The tip of the Teflon should be cut square

and flat to ensure good vacuum to die surface. Ensure the Teflon tip remains

clean from debris by inspecting under stereoscope.

During die attach, care must be exercised to ensure no tweezers touch the

top of the die.