2SB1453_15 datasheet(4/8 Pages) RENESAS

No de pièce	2SB1453

Description	PNP SILICON EPITAXIAL POWER TRANSISTOR FOR HIGH-SPEED SWITCHING

PDF	8 Pages

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Fabricant	RENESAS [Renesas Technology Corp]

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4 / 8 page

Data Sheet D16129EJ2V0DS

2SB1453

ELECTRICAL CHARACTERISTICS (Ta = 25

°°°°C)

Parameter

Symbol

Conditions

MIN.

TYP.

MAX.

Unit

Collector cutoff current

ICBO

VCB =

−60 V, IE = 0

−10

µA

DC current gain

hFE1**

VCE =

−5.0 V, IC = −0.5 A

100

400

−

DC current gain

hFE2**

VCE =

−5 V, IC = −3 A

−

Collector saturation voltage

VCE(sat)**

IC =

−3.0 A, IB = −300 mA

−1.0

Base saturation voltage

VBE(sat)**

IC =

−3.0 A, IB = −300 mA

−2.0

Gain bandwidth product

VCE =

−5.0 V, IC = −0.5 A

MHz

Collector capacitance

Cob

VCB =

−10 V, IE = 0, f = 1.0 MHz

Turn-on time

ton

0.4

µs

Storage time

tstg

1.7

µs

Fall time

IC =

−2.0 A, IB1 = −IB2 = −200 mA,

RL = 15

Ω, VCC ≅ −30 V

Refer to the test circuit.

0.5

µs

** Pulse test PW

≤ 350

µs, duty cycle ≤ 2%

SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT

Base current

waveform

Collector current

waveform

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