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2SC3356 Fiches technique(PDF) 5 Page - Renesas Technology Corp

No de pièce 2SC3356
Description  NPN Silicon RF Transistor
PDF  9 Pages
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Fabricant  RENESAS [Renesas Technology Corp]
Site Internet  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SC3356 Fiches technique(HTML) 5 Page - Renesas Technology Corp

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2SC3356
R09DS0021EJ0300 Rev.3.00
Page 5 of 7
Jun 28, 2011
SMITH CHART
S21e-FREQUENCY
CONDITION : VCE = 10 V, IC = 20 mA
90˚
0˚
30˚
–30˚
60˚
–60˚
180˚
150˚
–150˚
120˚
–120˚
–90˚
5
10
15
20
S21e
0.2 GHz
2.0 GHz
S12e-FREQUENCY
CONDITION : VCE = 10 V, IC = 20 mA
90˚
0˚
30˚
–30˚
60˚
–60˚
180˚
150˚
–150˚
120˚
–120˚
–90˚
0.05
0.1
0.15
0.2 0.25
S12e
0.2 GHz
2.0 GHz
S11e, S22e-FREQUENCY
CONDITION : VCE = 10 V, 200 MHz Step
60
50
70
80
90
100
110
120
130
0.18
0.16
0.14
0.12
0.10
0.08
0.17
0.15
0.13
0.11
0.09
0.07
0.32
0.34
0.36
0.38
0.40
0.42
0.33
0.35
0.37
0.39
0.41
0.43
REACTANCE COMPONENT
(
R
––––
ZO )
EN
T
0.3
0.2
0.1
0.4
50
10
6.0
4.0
3.0
20
0.2 GHz
2.0 GHz
2.0 GHz
0.2 GHz
IC = 20 mA
S22e
S11e
IC = 20 mA
IC = 5 mA
IC = 5 mA
0.2
0.4
0.6
0.8
1.0
0.2
0.8
0.6
0.4



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