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NP15P06SLG-E2-AYNote Fiches technique(PDF) 8 Page - Renesas Technology Corp |
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NP15P06SLG-E2-AYNote Fiches technique(HTML) 8 Page - Renesas Technology Corp |
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8 / 9 page ![]() Data Sheet D19078EJ2V0DS 6 NP15P06SLG PACKAGE DRAWING (Unit: mm) TO-252 (MP-3ZK) 6.5 ±0.2 2.3 ±0.1 0.5 ±0.1 0.76 ±0.12 0 to 0.25 0.5 ±0.1 1.0 No Plating No Plating 5.1 TYP. 4.3 MIN. 1 4 23 1.14 MAX. 2.3 2.3 1. Gate 2. Drain 3. Source 4. Fin (Drain) EQUIVALENT CIRCUIT Source Body Diode Gate Protection Diode Gate Drain Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. |
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