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NP15P06SLG-E2-AYNote Fiches technique(PDF) 8 Page - Renesas Technology Corp

No de pièce NP15P06SLG-E2-AYNote
Description  SWITCHING P-CHANNEL POWER MOS FET
PDF  9 Pages
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Fabricant  RENESAS [Renesas Technology Corp]
Site Internet  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

NP15P06SLG-E2-AYNote Fiches technique(HTML) 8 Page - Renesas Technology Corp

  NP15P06SLG-E2-AYNote Datasheet HTML 1Page - Renesas Technology Corp NP15P06SLG-E2-AYNote Datasheet HTML 2Page - Renesas Technology Corp NP15P06SLG-E2-AYNote Datasheet HTML 3Page - Renesas Technology Corp NP15P06SLG-E2-AYNote Datasheet HTML 4Page - Renesas Technology Corp NP15P06SLG-E2-AYNote Datasheet HTML 5Page - Renesas Technology Corp NP15P06SLG-E2-AYNote Datasheet HTML 6Page - Renesas Technology Corp NP15P06SLG-E2-AYNote Datasheet HTML 7Page - Renesas Technology Corp NP15P06SLG-E2-AYNote Datasheet HTML 8Page - Renesas Technology Corp NP15P06SLG-E2-AYNote Datasheet HTML 9Page - Renesas Technology Corp  
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Data Sheet D19078EJ2V0DS
6
NP15P06SLG
PACKAGE DRAWING (Unit: mm)
TO-252 (MP-3ZK)
6.5
±0.2
2.3
±0.1
0.5
±0.1
0.76
±0.12
0 to 0.25
0.5
±0.1
1.0
No Plating
No Plating
5.1 TYP.
4.3 MIN.
1
4
23
1.14 MAX.
2.3
2.3
1. Gate
2. Drain
3. Source
4. Fin (Drain)
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.



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