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DB3 Fiches technique(PDF) 1 Page - SUNMATE electronic Co., LTD |
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DB3 Fiches technique(HTML) 1 Page - SUNMATE electronic Co., LTD |
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1 / 2 page ![]() 2A Axial Leaded Silicon Bilateral Voltage Triggered 1 of 2 Features · Mechanical Data @ TA = 25 °C unless otherwise specified · Maximum Ratings and Electrical Characteristics Three way layer two terminal, axial lead , hermetically sealed diacs are designed specifically for riggering thyrisitors .The demonstrate low breakover current. The breakover symmetry is within three volts(DB3,DB4) or four volts(DB6).These diacs are intended for use in thyrisitors phase control.,circuits for lamp dimming universal motor speed control and heat control Power Dissipation on Printed Cir cuit(L=10mm) TA=50℃ Repetitive Peak on-state Tp=10uS Current f=100HZ Storage and Operating Juntion Temperature ℃ A mW 150 2.0 -44 to+125/-40 to+110 PARAMETERS DB3 DB4 VALUE DB6 UNITS SYMBOL Pc ITRM TSTG/TJ DB3 DB4 DB6 Min 28 35 56 Typ 32 40 60 Max 36 45 70 Output Voltage* Min V Breakover Current* Max uA Rise Time* Typ uS NOTE:* Electrical characteristics applicable in both forward and reverse directions. ** Connected in parallel with the devices. uA IB=0.5 VBO MAX See FIG 3 See FIG 3 Leakage Current* V Min Dynamic Breakover Voltage See FIG 1 5 1 △V1 Breakover Voltage* C=22nf** See Diagram 1 V Breakover Voltage Symmetry See Diagram 1 C=22nf** V VBO 1+VBOI- 1-VBOI UNITS PAPRAMETERS TEST CONDITIONS VALUE SYMBOLS See FIG 2 VO 3 △I=(IBO to IF=10mA) Max 10 1.5 Max IB tr 5 100 C=22nf** IBO DB3/DB4/DB6 A A B C D DO-35 Dim Min Max A 25.40 ¾ B ¾ 4.00 C ¾ 0.60 D ¾ 2.00 All Dimensions in mm Case: DO-35 |
Numéro de pièce similaire - DB3 |
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Description similaire - DB3 |
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