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2SC5015 Fiches technique(PDF) 2 Page - California Eastern Labs

No de pièce 2SC5015
Description  NPN EPITAXIAL SILICON RF TRANSISTOR
PDF  7 Pages
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Fabricant  CEL [California Eastern Labs]
Site Internet  http://www.cel.com
Logo CEL - California Eastern Labs

2SC5015 Fiches technique(HTML) 2 Page - California Eastern Labs

  2SC5015 Datasheet HTML 1Page - California Eastern Labs 2SC5015 Datasheet HTML 2Page - California Eastern Labs 2SC5015 Datasheet HTML 3Page - California Eastern Labs 2SC5015 Datasheet HTML 4Page - California Eastern Labs 2SC5015 Datasheet HTML 5Page - California Eastern Labs 2SC5015 Datasheet HTML 6Page - California Eastern Labs 2SC5015 Datasheet HTML 7Page - California Eastern Labs  
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Data Sheet PU10403EJ01V0DS
2
2
NE68518 / SC5015
ELECTRICAL CHARACTERISTICS (TA = +25°°°°C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
DC Characteristics
Collector Cut-off Current
ICBO
VCB = 5 V, IE = 0 mA
−
−
0.1
μ
A
Emitter Cut-off Current
IEBO
VEB = 1 V, IC = 0 mA
−
−
0.1
μ
A
DC Current Gain
hFENote1 VCE = 3 V, IC = 10 mA
75
−
150
−
RF Characteristics
Gain Bandwidth Product
fT
VCE = 3 V, IC = 10 mA, f = 2 GHz
−
12
−
GHz
Insertion Power Gain
⏐
S21e⏐2 VCE = 3 V, IC = 10 mA, f = 2 GHz
9
11
−
dB
V
F
N
e
r
u
gi
F
e
si
o
N
CE
= 3 V, IC = 3 mA, f = 2 GHz
−
1.5
2.5
dB
Reverse Transfer Capacitance
CreNote2 VCB = 3 V, IE = 0 mA, f = 1 MHz
−
0.3
0.5
pF
Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
hFE CLASSIFICATION
Rank
KB
Marking
T83
hFE Value
75 to 150



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