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2SC4227 Fiches technique(PDF) 2 Page - California Eastern Labs

No de pièce 2SC4227
Description  NPN EPITAXIAL SILICON RF TRANSISTOR
PDF  6 Pages
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Fabricant  CEL [California Eastern Labs]
Site Internet  http://www.cel.com
Logo CEL - California Eastern Labs

2SC4227 Fiches technique(HTML) 2 Page - California Eastern Labs

  2SC4227 Datasheet HTML 1Page - California Eastern Labs 2SC4227 Datasheet HTML 2Page - California Eastern Labs 2SC4227 Datasheet HTML 3Page - California Eastern Labs 2SC4227 Datasheet HTML 4Page - California Eastern Labs 2SC4227 Datasheet HTML 5Page - California Eastern Labs 2SC4227 Datasheet HTML 6Page - California Eastern Labs  
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Data Sheet PU10451EJ01V0DS
2
NE68130 / 2SC4227
ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
s
ci
ts
ir
e
tc
a
r
a
h
C
C
D
Collector Cut-off Current
ICBO
VCB = 10 V, IE = 0 mA
−
−
0.8
μ
A
Emitter Cut-off Current
IEBO
VEB = 1 V, IC = 0 mA
−
−
0.8
μ
A
h
ni
a
G
t
n
e
rr
u
C
C
D
FE
Note 1
VCE = 3 V, IC
0
4
A
m
7
=
−
240
−
s
ci
ts
ir
e
tc
a
r
a
h
C
F
R
Gain Bandwidth Product
fT
VCE = 3 V, IC = 7 mA
4.5
7.0
–
GHz
Insertion Power Gain
⏐
S21e⏐2 VCE = 3 V, IC = 7 mA, f = 1 GHz
10
12
−
dB
V
F
N
e
r
u
gi
F
e
si
o
N
CE
= 3 V, IC = 7 mA, f = 1 GHz
−
1.4
2.7
dB
Reverse Transfer Capacitance
CreNote2 VCB = 3 V, IE = 0 mA, f = 1 MHz
−
0.45
0.9
pF
Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
hFE CLASSIFICATION
Rank
R33
R34
R35
Marking
R33
R34
R35
hFE Value
40 to 90
70 to 150
110 to 240



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