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2SC3356 Fiches technique(PDF) 5 Page - California Eastern Labs

No de pièce 2SC3356
Description  NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Amplification 3-pin Minimold
PDF  9 Pages
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Fabricant  CEL [California Eastern Labs]
Site Internet  http://www.cel.com
Logo CEL - California Eastern Labs

2SC3356 Fiches technique(HTML) 5 Page - California Eastern Labs

  2SC3356 Datasheet HTML 1Page - California Eastern Labs 2SC3356 Datasheet HTML 2Page - California Eastern Labs 2SC3356 Datasheet HTML 3Page - California Eastern Labs 2SC3356 Datasheet HTML 4Page - California Eastern Labs 2SC3356 Datasheet HTML 5Page - California Eastern Labs 2SC3356 Datasheet HTML 6Page - California Eastern Labs 2SC3356 Datasheet HTML 7Page - California Eastern Labs 2SC3356 Datasheet HTML 8Page - California Eastern Labs 2SC3356 Datasheet HTML 9Page - California Eastern Labs  
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 5 / 9 page
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NE85633 / 2SC3356
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5
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g
a
P
0
0
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3
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0
0
3
0
J
E
1
2
0
0
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9
0
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Jun 28, 2011
SMITH CHART
S21e-FREQUENCY
CONDITION : VCE = 10 V, IC = 20 mA
90˚
0˚
30˚
–30˚
60˚
–60˚
180˚
150˚
–150˚
120˚
–120˚
–90˚
5
10
15
20
S21e
0.2 GHz
2.0 GHz
S12e-FREQUENCY
CONDITION : VCE = 10 V, IC = 20 mA
90˚
0˚
30˚
–30˚
60˚
–60˚
180˚
150˚
–150˚
120˚
–120˚
–90˚
0.05 0.1 0.15 0.2 0.25
S12e
0.2 GHz
2.0 GHz
S11e, S22e-FREQUENCY
CONDITION : VCE = 10 V, 200 MHz Step
60
50
70
80
90
100
110
120
130
0.18
0.16
0.14
0.12
0.10
0.08
0.17
0.15
0.13
0.11
0.09
0.07
0.32
0.34
0.36
0.38
0.40
0.42
0.33
0.35
0.37
0.39
0.41
0.43
REACTANCE COMPONENT
( R––––Z
O
)
ENT
0.3
0.2
0.1
0.4
50
10
6.0
4.0
3.0
20
0.2 GHz
2.0 GHz
2.0 GHz
0.2 GHz
IC = 20 mA
S22e
S11e
IC = 20 mA
IC = 5 mA
IC = 5 mA
0.2
0.4
0.6
0.8
1.0
0.2
0.8
0.6
0.4
A Business Partner of Renesas Electronics Corporation.



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