ACE2310C datasheet(1/6 Pages) ACE

No de pièce	ACE2310C

Description	Plastic-Encapsulate MOSFET

PDF	6 Pages

Scroll/Zoom	100%

Fabricant	ACE [ACE Technology Co., LTD.]

Site Internet	http://www.ace-ele.com

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ACE2310C

Plastic-Encapsulate MOSFET

VER 1.1

1

Description

The ACE2310C uses advanced trench technology to provide excellent RDS(ON) , low gate charge and

operation with gate voltage as low as 2.5V. This device is suitable for use as a battery protection or in

other switching application.

Features

• High power and current handing capability

• Lead free product is acquired

• Surface mount package

Applications

• Battery Switch

• DC/DC Converter

Absolute Maximum Ratings

Parameter

Symbol

Max

Unit

Drain-Source Voltage

VDS

60

V

Gate-Source Voltage

VGS

±20

V

Continuous Drain Current

ID

3

A

Pulsed Drain Current (note 1)

IDM

10

A

Power Dissipation

PD

0.35

W

Thermal Resistance from Junction to Ambient (note 2)

RθJA

357

℃/W

Junction Temperature

TJ

150

℃

Storage Temperature

TSTG

-55~150

Packaging Type

SOT-23-3

Equivalent Circuit

Ordering information

ACE2310C XX + H

BM:SOT-23-3

Pb - free

Halogen - free

Numéro de pièce similaire - ACE2310C

Fabricant	No de pièce	Fiches technique	Description
ACE Technology Co., LTD...	ACE2301	97Kb / 5P	P-Channel Enhancement Mode MOSFET VER 1.2
	ACE2301	267Kb / 5P	P-Channel Enhancement Mode MOSFET VER 1.3
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	ACE2301BM+H	97Kb / 5P	P-Channel Enhancement Mode MOSFET VER 1.2
	ACE2301BM+H	267Kb / 5P	P-Channel Enhancement Mode MOSFET VER 1.3

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ACE2310C Fiches technique(PDF) 1 Page - ACE Technology Co., LTD.

ACE2310C Fiches technique(HTML) 1 Page - ACE Technology Co., LTD.

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