ACE2302C datasheet(1/6 Pages) ACE

No de pièce	ACE2302C

Description	N-Channel Enhancement Mode MOSFET

PDF	6 Pages

Scroll/Zoom	100%

Fabricant	ACE [ACE Technology Co., LTD.]

Site Internet	http://www.ace-ele.com

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ACE2302C

N-Channel Enhancement Mode MOSFET

VER 1.2

1

Description

The ACE2302C uses advanced trench technology to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 1.8V. This device is suitable for use as load switch or in PWM

applications.

Features

 20V/5.1A

 R

DS(ON)

=28

mΩ (typ.) @ V

GS=4.5V

 R

DS(ON)

=38

mΩ (typ.) @ V

GS=2.5V

 R

DS(ON)

=60

mΩ (typ.) @ V

GS=1.8V

Absolute Maximum Ratings

Parameter

Symbol

Max

Unit

Drain-Source Voltage

VDSS

20

V

Gate-Source Voltage

VGSS

±12

V

Drain Current (Continuous)

TA=25℃

ID

5.1

A

TA=70℃

4

Drain Current (Pulsed)

IDM

20

A

Power Dissipation

TA=25℃

PD

1

W

Operating temperature / storage temperature TJ/TSTG -55~150 ℃

Packaging Type

SOT-23-3

3

1

2

Ordering information

ACE2302C XX + H

SOT-23-3

Description

Function

1

G

Gate

2

S

Source

3

D

Drain

BM : SOT-23-3

Pb - free

Halogen - free

Numéro de pièce similaire - ACE2302C

Fabricant	No de pièce	Fiches technique	Description
ACE Technology Co., LTD...	ACE2302	205Kb / 7P	N-Channel Enhancement Mode MOSFET VER 1.2
	ACE2302	428Kb / 7P	N-Channel Enhancement Mode MOSFET VER 1.3
	ACE2302B	649Kb / 6P	N-Channel Enhancement Mode MOSFET VER 1.2
VBsemi Electronics Co.,...	ACE2302BBM+H	2Mb / 9P	N-Channel 20 V (D-S) MOSFET
VBsemi Electronics Co.,...	ACE2302BBM-H	2Mb / 9P	N-Channel 20 V (D-S) MOSFET

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ACE2302C Fiches technique(PDF) 1 Page - ACE Technology Co., LTD.

ACE2302C Fiches technique(HTML) 1 Page - ACE Technology Co., LTD.

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