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IRF430 Fiches technique(PDF) 5 Page - Intersil Corporation

No de pièce IRF430
Description  4.5A, 500V, 1.500 Ohm, N-Channel Power MOSFET
PDF  7 Pages
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Fabricant  INTERSIL [Intersil Corporation]
Site Internet  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

IRF430 Fiches technique(HTML) 5 Page - Intersil Corporation

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5
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
Typical Performance Curves Unless Otherwise Specified (Continued)
1.25
1.05
0.85
0
160
TJ, JUNCTION TEMPERATURE (
oC)
1.15
0.95
0.75
-40
40
80
120
ID = 250µA
VDS, DRAIN TO SOURCE VOLTAGE (V)
2000
1600
1200
800
400
0
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGD
CISS
COSS
1
10
20
30
40
50
CRSS
ID, DRAIN CURRENT (A)
12
3
4
05
5
4
3
0
2
1
TJ = 125
oC
TJ = 25
oC
TJ = -55
oC
80
µs PULSE TEST
VSD , SOURCE TO DRAIN VOLTAGE (V)
100
10
1
0
1
234
TJ = 150
oC
TJ = 25
oC
80
µs PULSE TEST
Qg(TOT), TOTAL GATE CHARGE (nC)
816
24
32
040
20
10
0
5
ID = 4.5A
15
VDS = 100V
VDS = 250V
VDS = 400V
IRF430



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