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HCS245MS Fiches technique(PDF) 3 Page - Intersil Corporation |
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HCS245MS Fiches technique(HTML) 3 Page - Intersil Corporation |
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3 / 7 page ![]() 7-477 Specifications HCS245MS TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER SYMBOL (NOTES 1, 2) CONDITIONS GROUP A SUB- GROUPS TEMPERATURE LIMITS UNITS MIN MAX Propagation Delay Data to Output TPLH TPHL VCC = 4.5V 9 +25oC 2 19 ns 10, 11 +125oC, -55oC 2 23 ns Enable to Output TPZL TPZH VCC = 4.5V 9 +25oC 2 26 ns 10, 11 +125oC, -55oC 2 30 ns Disable to Output TPLZ TPHZ VCC = 4.5V 9 +25oC 2 28 ns 10, 11 +125oC, -55oC 2 33 ns NOTES: 1. All voltages referenced to device GND. 2. AC measurements assume RL = 500 Ω, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC. TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE LIMITS UNITS MIN MAX Capacitance Power Dissipation CPD VCC = 5.0V, f = 1MHz 1 +25oC Typical 45 pF 1 +125oC, -55oC Typical 45 pF Input Capacitance CIN VCC = Open, f = 1MHz 1 +25oC - 10 pF 1 +125oC, -55oC - 10 pF Output Transition Time TTHL TTLH VCC = 4.5V 1 +25oC - 12 ns 1 +125oC, -55oC - 18 ns NOTES: 1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics. TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETERS SYMBOL (NOTES 1, 2) CONDITIONS TEMP- ERATURE 200K RAD LIMITS 1M RAD LIMITS UNITS MIN MAX MIN MAX Quiescent Current ICC VCC = 5.5V, VIN = VCC or GND +25oC - 0.75 - 3.75 mA Output Current (Sink) IOL VCC = 4.5V, VIN = VCC or GND, VOUT = 0.4V +25oC 6.0 - 5.0 - mA Output Current (Source) IOH VCC = 4.5V, VIN = VCC or GND, VOUT = VCC -0.4V +25oC -6.0 - -5.0 - mA Output Voltage Low VOL VCC = 4.5V and 5.5V, VIH = 0.70(VCC), VIL = 0.30(VCC) at 200K RAD, VIL = 0.12(VCC) at 1M RAD, IOL = 50 µA +25oC - 0.1 - 0.1 V Output Voltage High VOH VCC = 4.5V and 5.5V, VIH = 0.70(VCC), VIL = 0.30(VCC) at 200K RAD, VIL = 0.12(VCC) at 1M RAD, IOH = -50 µA +25oC VCC -0.1 - VCC -0.1 -V Input Leakage Current IIN VCC = 5.5V, VIN = VCC or GND +25oC- ±5- ±5 µA Three-State Output Leakage Current IOZ Applied Voltage = 0V or VCC +25oC- ±50 - ±100 µA |
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