2SA812 datasheet(1/2 Pages) GSME

No de pièce	2SA812

Description	PNP General Purpose Transistor

PDF	2 Pages

Scroll/Zoom	100%

Fabricant	GSME [Guilin Strong Micro-Electronics Co., Ltd.]

Site Internet	http://www.gsme.com.cn

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桂林斯壯微電子有限責任公司

Guilin Strong Micro-Electronics Co.,Ltd.

GMA812(销售型號 2SA812)

■

FEATURES 特點

PNP General Purpose Transistor

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MAXIMUM RATINGS 最大額定值

Characteristic 特性參數

Symbol 符號

Rating 額定值

Unit 單位

Collector-Emitter Voltage

集電極

-發射極電壓

VCEO

-50

Vdc

Collector-Base Voltage

集電極

-基極電壓

VCBO

-60

Vdc

Emitter-Base Voltage

發射極

-基極電壓

VEBO

-5.0

Vdc

Collector Current—Continuous

集電極電流

-連續

Ic

-100

mAdc

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THERMAL CHARACTERISTICS 熱特性

Characteristic

特性參數

Symbol

符號

Max

最大值

Unit

單位

Total Device Dissipation 總耗散功率

FR-5 Board(1)

TA

=25℃環境溫度爲 25℃

Derate above25℃ 超過 25℃遞減

PD

225

1.8

mW

mW/℃

Total Device Dissipation 總耗散功率

Alumina Substrate 氧化鋁襯底,(2)TA

=25℃

Derate above25℃ 超過 25℃遞減

PD

300

2.4

mW

mW/℃

Thermal Resistance Junction to Ambient

熱阻

R

ΘJA

417

℃

/W

Junction and Storage Temperature

結溫和儲存溫度

TJ,Tstg

-55to+150℃

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2SA812 Fiches technique(PDF) 1 Page - Guilin Strong Micro-Electronics Co., Ltd.

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