2SC2884 datasheet(1/2 Pages) MAKOSEMI

No de pièce	2SC2884

Description	Suitable for output stage of 3 watts amplifier.

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Fabricant	MAKOSEMI [MAKO SEMICONDUCTOR CO.,LIMITED]

Site Internet	http://www.makosemi.hk/

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Page:P2-P1

Plastic-Encapsulate Transistors

FEATURES

• Suitable for output stage of 3 watts amplifier.

• High DC current gain.

• Small flat package.

• PC=1.0 to 2.0W.

• Complements the 2SA1204.

Maximum Ratings (Ta=25

unless otherwise noted)

Parameter

Symbol

Value

Unit

Collector-Base Voltage

VCBO

35

V

Collector-Emitter Voltage

VCEO

30

V

Emitter-Base Voltage

VEBO

5

V

Collector Current -Continuous

IC

0.8

A

Collector Power dissipation

PC

0.5

W

Junction Temperature

TJ

150

Storage Temperature

Tstg

-55to +150

ELECTRICAL CHARACTERISTICS ( @ Ta=25

unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

Collector-emitter breakdown voltage

VCEO

IC=10mA,IB=0

35

V

Collector cut-off current

ICBO

VCB=35V,IE=0

0.1

μA

Emitter cut-off current

IEBO

VEB=5V,IC=0

0.1

μA

DC current gain

hFE

VCE=1V,IC=100mA

100

320

Collector-emitter saturation voltage

VCE(sat)

IC=0.5A, IB=0.02A

0.5

V

Base-emitter voltage

VBE

VCE=1V, IC=10mA

0.5

0.8

V

Transition frequency

fT

VCE=5V,Ic=10mA

120

MHz

Collector output capacitance

Cob

VCB=10V,IE=0,f=1MHz

13

pF

CLASSIFICATION OF hFE

Rank

O

Y

Range

100-200

160-320

Marking

PO1

PY1

2SC2884 (NPN)

1. BASE

2. COLLECTO

SOT-89

3. EMITTER

MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/

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