MS23P21 datasheet(2/4 Pages) BWTECH

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Preliminary MS23P21

P-Channel 20-V (D-S) MOSFET

Publication Order Number: [MS23P21]

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings (Tc=25°C unless otherwise specified)

Symbol

Parameter

Value

Unit

VDS

Drain-Source Voltage

-20

VGS

Gate-Source Voltage

±8

Continuous Drain Current

a (T

A=25°C)

-4.1

IDM

Pulsed Drain Current

-10

Continuous Source Current (Diode Conduction)

0.46

TJ,TSTG

Operating Junction and Storage Temperature

-55 to +150

°C

Power Dissipation@ TC=25°C

1.25

NOTE:

1. Repetitive rating; pulse width limited by maximum junction temperature.

Thermal Characteristics (Tc=25°C unless otherwise specified)

Parameter

Symbol

Value

Units

Maximum Junction-to-Case

RθJC

150

°C/W

Maximum Junction-to-Ambient

RθJA

100

Static

Symbol

Parameter

Test Conditions

Min

Typ.

Max.

Units

VGS(th)

Gate-Threshold Voltage

VDS = VGS, ID = -250μA

-0.4

-1.5

IGSS

Gate-Body Leakage

VDS = 0 V , VGS = ±8 V

±100

IDSS

Zero Gate Voltage Drain Current

VDS = -16 V , VGS = 0 V

VDS = -16 V , VGS = 0 V , TJ = 55°C

-1

-10

ID(on)

On-State Drain Current

VDS = -5 V, VGS = -4.5 V

-5

DS(on)

Drain-Source On-Resistance

VDS = -4.5 V, ID = -4.1 A

VDS = -2.5 V, ID = -3.2 A

110

gfs

Forward Tranconductance

VDS = -5 V, VGS = -1.25 V

VSD

Diode Forward Voltage

IS = -0.46 V, ID = 0 V

-0.65

ISM

Pulsed Body-Diode Current

-10

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