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STB18NF30 Fiches technique(PDF) 5 Page - STMicroelectronics

No de pièce STB18NF30
Description  Automotive-grade N-channel 330 V, 160 m typ., 18 A STripFET II Power MOSFET in a DPAK package
PDF  15 Pages
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB18NF30 Fiches technique(HTML) 5 Page - STMicroelectronics

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STB18NF30
Electrical characteristics
15
Table 8. Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain current
-
18
A
ISDM
Source-drain current
(pulsed)
-72
A
VSD
Forward on voltage
ISD=18 A, VGS=0 V
-
1.5
V
trr
Reverse recovery time
ISD=18 A, di/dt=100 A/µs,
VDD=100 V
(see Figure 15)
-
180
400
ns
Qrr
Reverse recovery charge
-
1.5
µC
IRRM
Reverse recovery current
-
16
A
trr
Reverse recovery time
ISD=18 A, di/dt=100 A/µs,
VDD=100 V, Tj=150 °C
(see Figure 15)
-
210
ns
Qrr
Reverse recovery charge
-
1.9
µC
IRRM
Reverse recovery current
-
19
A



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