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GMS81C2012 Fiches technique(PDF) 23 Page - Hynix Semiconductor |
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GMS81C2012 Fiches technique(HTML) 23 Page - Hynix Semiconductor |
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23 / 107 page ![]() HYUNDAI MicroElectronics GMS81C2012/GMS81C2020 MAR. 2000 Ver 1.00 23 7.8 Typical Characteristics This graphs and tables provided in this section are for de- sign guidance only and are not tested or guaranteed. In some graphs or tables the data presented are out- side specified operating range (e.g. outside specified VDD range). This is for information only and devices are guaranteed to operate properly only within the specified range. The data presented in this section is a statistical summary of data collected on units from different lots over a period of time. “Typical” represents the mean of the distribution while “max” or “min” represents (mean + 3 σ) and (mean − 3 σ) respectively where σ is standard deviation IOH−VOH -1.6 -1.2 -0.8 -0.4 0 4.6 4.7 4.8 4.9 5.0 (V) Ta=25 °C VDD=5.0V (mA) IOH VOH IOH−VOH -1.6 -1.2 -0.8 -0.4 0 3.6 3.7 3.8 3.9 4.0 (V) Ta=25 °C VDD=4.0V (mA) IOH VOH IOH−VOH -1.6 -1.2 -0.8 -0.4 0 2.6 2.7 2.8 2.9 3.0 (V) Ta=25 °C VDD=3.0V (mA) IOH VOH IOL−VOL 16 12 8 4 0 0.6 0.8 1.0 1.2 1.4 (V) Ta=25 °C VDD=5.0V (mA) IOL VOL IOL−VOL 16 12 8 4 0 0.6 0.8 1.0 1.2 1.4 (V) Ta=25 °C VDD=4.0V (mA) IOL VOL IOL−VOL 16 12 8 4 0 0.6 0.8 1.0 1.2 1.4 (V) Ta=25 °C VDD=3.0V (mA) IOL VOL IOH−VOH -16 -12 -8 -4 0 1.0 2.0 3.0 4.0 5.0 (V) Ta=25 °C VDD=5.0V (mA) IOH VOH IOH−VOH -16 -12 -8 -4 0 1.0 2.0 3.0 4.0 5.0 (V) Ta=25 °C VDD=4.0V (mA) IOH VOH IOH−VOH -16 -12 -8 -4 0 1.0 2.0 3.0 4.0 5.0 (V) Ta=25 °C VDD=3.0V (mA) IOH VOH R40~R43, R5, R6, R70~R73 BUZO, T0O, PWM1O/T1O SCLK, SOUT pins R40~R43, R5, R6, R70~R73 BUZO, T0O, PWM1O/T1O SCLK, SOUT pins R0, R1, R2,RA R30~R35 pins |
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