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MBRF20035 Fiches technique(PDF) 1 Page - GeneSiC Semiconductor, Inc.

No de pièce MBRF20035
Description  Silicon Power Schottky Diode
PDF  3 Pages
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Fabricant  GENESIC [GeneSiC Semiconductor, Inc.]
Site Internet  http://www.genesicsemi.com/
Logo GENESIC - GeneSiC Semiconductor, Inc.

MBRF20035 Fiches technique(HTML) 1 Page - GeneSiC Semiconductor, Inc.

  MBRF20035 Datasheet HTML 1Page - GeneSiC Semiconductor, Inc. MBRF20035 Datasheet HTML 2Page - GeneSiC Semiconductor, Inc. MBRF20035 Datasheet HTML 3Page - GeneSiC Semiconductor, Inc.  
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VRRM = 20 V - 40 V
IF(AV) = 200 A
Features
• High Surge Capability
TO-244AB Package
• Not ESD Sensitive
Parameter
Symbol
MBRF20020(R) MBRF20030(R)
Unit
Repetitive peak reverse
voltage
VRRM
20
30
V
RMS reverse voltage
VRMS
14
21
V
• Types from 20 to 40 V VRRM
Silicon Power
Schottky Diode
Conditions
40
28
MBRF20020 thru MBRF20040R
MBRF20040(R)
35
25
MBRF20035(R)
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
DC blocking voltage
VDC
20
30
V
Operating temperature
Tj
-55 to 150
-55 to 150
°C
Storage temperature
Tstg
-55 to 150
-55 to 150
°C
Parameter
Symbol
MBRF20020(R) MBRF20030(R)
Unit
Average forward current
(per pkg)
IF(AV)
200
200
A
Maximum forward voltage
(per leg)
0.70
0.70
11
10
10
30
30
Thermal characteristics
Thermal resistance, junction-
case (per leg)
R
ΘJC
0.45
0.45
°C/W
A
Tj = 100 °C
10
10
Peak forward surge current
(per leg)
IFSM
tp = 8.3 ms, half sine
1500
1500
TC = 125 °C
200
mA
V
-55 to 150
-55 to 150
40
35
MBRF20035(R)
0.45
Tj = 150 °C
0.45
0.70
0.70
30
200
1500
1500
Tj = 25 °C
IFM = 100 A, Tj = 25 °C
Conditions
-55 to 150
30
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Reverse current at rated DC
blocking voltage (per leg)
IR
VF
-55 to 150
MBRF20040(R)
11
www.genesicsemi.com/silicon-products/schottky-rectifiers/
1


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