IXYS reserves the right to change limits, test conditions, and dimensions.

IXFA7N80P IXFI7N80P IXFP7N80P

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

5

9.5

S

C

iss

1890

pF

C

oss

V

133

pF

C

rss

13

pF

t

d(on)

28

ns

t

r

V

32

ns

t

d(off)

R

55

ns

t

f

24

ns

Q

g(on)

32

nC

Q

gs

V

12

nC

Q

gd

9nC

R

thJC

0.62

°C/W

R

thCS

0.5

°C/W

Source-Drain Diode

Characteristic Values

(T

Symbol

Test Conditions

Min.

Typ.

Max.

I

S

V

7

A

I

SM

Repetitive

18

A

V

SD

I

1.5

V

Pulse test, t

≤ 300 μs, duty cycle d ≤ 2 %

t

rr

I

250

ns

Q

RM

-di/dt = 100 A/

μs

0.3

μC

I

RM

V

R

= 100V

3

A

IXYS MOSFETs and IGBTs are covered by 4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

one or moreof the following U.S. patents:

4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2

6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

TO-263 (IXFA) Outline

Pins:

1 - Gate

2 - Drain

3 - Source

4 - Drain

TO-220 (IXFP) Outline

Leaded 263 (IXFI) Outline