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STP40N60M2 Fiches technique(PDF) 5 Page - STMicroelectronics

No de pièce STP40N60M2
Description  N-channel 600 V, 0.078 typ., 34 A MDmesh II Plus low Qg Power MOSFETs in D2PAK, TO-220 and TO-247 packages
PDF  21 Pages
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP40N60M2 Fiches technique(HTML) 5 Page - STMicroelectronics

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STB40N60M2, STP40N60M2, STW40N60M2
Electrical characteristics
21
Table 8. Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
I
SD
Source-drain current
-
34
A
I
SDM
(1)
1.
Pulse width limited by safe operating area.
Source-drain current (pulsed)
-
136
A
V
SD
(2)
2.
Pulsed: pulse duration = 300 μs, duty cycle 1.5%
Forward on voltage
I
SD
= 34 A, V
GS
= 0
-
1.6
V
t
rr
Reverse recovery time
I
SD
= 34 A, di/dt = 100 A/μs
V
DD
= 60 V (see
Figure 21)
-
440
ns
Q
rr
Reverse recovery charge
-
8.2
μC
I
RRM
Reverse recovery current
-
37
A
t
rr
Reverse recovery time
I
SD
= 34 A, di/dt = 100 A/μs
V
DD
= 60 V, T
j
= 150 °C
(see
Figure 21)
-
568
ns
Q
rr
Reverse recovery charge
-
11.5
μC
I
RRM
Reverse recovery current
-
40.5
A



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