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FMMT596TC Fiches technique(PDF) 2 Page - Zetex Semiconductors

No de pièce FMMT596TC
Description  SOT 23 PNP silicon planar high voltage transistor
PDF  6 Pages
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Fabricant  ZETEX [Zetex Semiconductors]
Site Internet  http://www.diodes.com/
Logo ZETEX - Zetex Semiconductors

FMMT596TC Fiches technique(HTML) 2 Page - Zetex Semiconductors

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FMMT596
Issue 4 - July 2007
2
www.zetex.com
© Zetex Semiconductors plc 2007
Electrical characteristics (Tamb = 25°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-base breakdown
voltage
V(BR)CBO
-220
V
IC=-100 A
Collector-emitter breakdown
voltage
V(BR)CEO
-200
V
IC=-10mA (*)
NOTES:
(*) Measured under pulsed conditions. Pulse width = 300 s. Duty cycle
2%.
Emitter-base breakdown
voltage
V(BR)EBO
-5
V
IE=-100 A
Collector cut-off current
ICBO
-100
nA
VCB=-200V
Emitter cut-off current
IEBO
-100
nA
VEB=-4V
Collector-emitter cut-off
current
ICES
-100
nA
VCES=-200V
Collector-emitter saturation
voltage
VCE(sat)
-0.2
-0.35
V
V
IC=-100mA, IB=-10mA,
IB=-250mA,
IB=-25mA(*)
Base-emitter saturation
voltage
VBE(sat)
-1.0
V
IC=-250mA, IB=-25mA(*)
Base-emitter turn-on voltage
VBE(on)
-0.9
V
IC=-250mA,
VCE=-10V(*)
Static forward current
transfer ratio
hFE
100
IC=-1mA, VCE=-10V
100
IC=-100mA, VCE=-10V(*)
85
300
IC=-250mA, VCE=-10V(*)
35
IC=-400mA, VCE=-10V(*)
Transition frequency
fT
150
MHz
IC=-50mA, VCE=-10V,
f=100MHz
Output capacitance
Cobo
10
pF
VCB=-10V, f=1MHz
Switching times
td
22
ns
IC=-200mA, VCC=-80V
Ib1=Ib2=-20mA
tr
19
ts
472
tf
70
Switching times
td
44
ns
IC=-100mA, VCC=-80V
Ib1=Ib2=-10mA
tr
31
ts
665
tf
76



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