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AP40P03GP Fiches technique(PDF) 2 Page - Advanced Power Electronics Corp. |
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AP40P03GP Fiches technique(HTML) 2 Page - Advanced Power Electronics Corp. |
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2 / 5 page ![]() AP40P03GP Electrical Characteristics@Tj=25 oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -30 - - V ΔBV DSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA - -0.02 - V/℃ RDS(ON) Static Drain-Source On-Resistance 2 VGS=-10V, ID=-18A - - 28 mΩ VGS=-4.5V, ID=-10A - - 50 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance VDS=-10V, ID=-18A - 20 - S IDSS Drain-Source Leakage Current (Tj=25 oC) VDS=-30V, VGS=0V - - -1 uA Drain-Source Leakage Current (Tj=150 oC) VDS=-24V, VGS=0V - - -25 uA IGSS Gate-Source Leakage VGS= ±20V - - ±100 nA Qg Total Gate Charge 2 ID=-18A - 14 22 nC Qgs Gate-Source Charge VDS=-24V - 3 - nC Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 9 - nC td(on) Turn-on Delay Time 2 VDS=-15V - 12 - ns tr Rise Time ID=-18A - 56 - ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=-10V - 30 - ns tf Fall Time RD=0.8Ω -57 - ns Ciss Input Capacitance VGS=0V - 915 1465 pF Coss Output Capacitance VDS=-25V - 280 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 195 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage 2 IS=-18A, VGS=0V - - -1.2 V trr Reverse Recovery Time 2 IS=-18A, VGS=0V, - 30 - ns Qrr Reverse Recovery Charge dI/dt=-100A/µs - 21 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION. DEVICE OR SYSTEM ARE NOT AUTHORIZED. THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT 2/4 |
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