SSFD4024 datasheet(2/4 Pages) SILIKRON

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SSFD4024

Electrical Characterizes @TA=25℃ unless otherwise specified

Parameter

Min.

Typ.

Max

Units

Conditions

BVDSS

Drain-to-Source breakdown voltage

—

VGS = 0V, ID = 250μA

RDS(on)

Static Drain-to-Source on-resistance

—

mΩ

VGS = 10V, ID = 12A③

VGS(th)

Gate threshold voltage

—

VDS = VGS, ID = 250μA

—

VDS = 40V, VGS = 0V

IDSS

Drain-to-Source leakage current

—

150

μA

VDS = 40V, VGS = 0V, TJ =

125°C

Gate-to-Source forward leakage

—

100

VGS = 20V

IGSS

Gate-to-Source reverse leakage

—

-100

VGS = -20V

Total gate charge

—

9.5

—

Qgs

Gate-to-Source charge

—

4.5

—

Qgd

Gate-to-Drain("Miller") charge

—

1.5

—

ID = 12A VDS =20V VGS =

10V③

td(on)

Turn-on delay time

—

3.5

—

Rise time

—

td(off)

Turn-Off delay time

—

13.5

—

Fall time

—

3.5

—

VDD = 20V ID = 12A RG = 1.7

Ω VGS = 10V③

Ciss

Input capacitance

—

410

—

Coss

Output capacitance

—

Crss

Reverse transfer capacitance

—

VGS = 0V VDS = 20V ƒ =

1.0MHz

Source-Drain Ratings and Characteristics

Parameter

Min.

Typ.

Max

Units

Conditions

Continuous

Source Current

(Body Diode)

—

MOSFET symbol

showing the

integral reverse

p-n junction diode.

VSD

Diode Forward

Voltage

—

0.75

1.0

TJ = 25°C, IF = 1A, VDD = 20V di/dt = 100A/μs③

trr

Reverse Recovery

Time

—

Qrr

Reverse Recovery

Charge

—

18.5

—

TJ = 25°C, IF = 12A, VDD = 20V di/dt = 100A/μs③

ton

Forward Turn-on

Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

2010.09.01

Version : 1.0

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