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SW60N06T Fiches technique(PDF) 1 Page - Xian Semipower Electronic Technology Co., Ltd. |
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SW60N06T Fiches technique(HTML) 1 Page - Xian Semipower Electronic Technology Co., Ltd. |
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1 / 5 page ![]() Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. May. 2014. Rev.1.0 Features ■ High ruggedness ■ R DS(ON) (Max8mΩ)@VGS=10V ■ Gate Charge (Typical 77nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested N-channel TO-220 MOSFET Absolute maximum ratings Thermal characteristics Symbol Parameter Value Unit R thjc Thermal resistance, Junction to case 0.88 oC/W R thcs Thermal resistance, Case to Sink oC/W R thja Thermal resistance, Junction to ambient 53.1 oC/W 1/5 BV DSS : 60V I D : 60A R DS(ON) :8mΩ 1 2 3 SW60N06T SAMWIN Item Sales Type Marking Package Packaging 1 SW P 60N06 SW60N06T TO-220 TUBE Order Codes Symbol Parameter Value Unit V DSS Drain to Source Voltage 60 V I D Continuous Drain Current (@T C=25 oC) 60* A Continuous Drain Current (@T C=100 oC) 37.8* A I DM Drain current pulsed (note 1) 240 A V GS Gate to Source Voltage ± 20 V E AS Single pulsed Avalanche Energy (note 2) 350 mJ E AR Repetitive Avalanche Energy (note 1) 67 mJ dv/dt Peak diode Recovery dv/dt (note 3) 5 V/ns P D Total power dissipation (@T C=25 oC) 141 W Derating Factor above 25oC 1.1 W/oC T STG, TJ Operating Junction Temperature & Storage Temperature -55 ~ + 150 oC T L Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. 300 oC General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply. *. Drain current is limited by junction temperature. 1. Gate 2. Drain 3. Source 1 2 3 TO-220 |
Numéro de pièce similaire - SW60N06T |
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Description similaire - SW60N06T |
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