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SW2N10 Fiches technique(PDF) 1 Page - Xian Semipower Electronic Technology Co., Ltd. |
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SW2N10 Fiches technique(HTML) 1 Page - Xian Semipower Electronic Technology Co., Ltd. |
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1 / 5 page ![]() Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. May. 2014. Rev.1.0 Features ■ High ruggedness ■ R DS(ON) (Max0.24Ω)@VGS=10V ■ Gate Charge (Typical 13nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested N-channel SOT-23 MOSFET Absolute maximum ratings 1/5 BV DSS : 100V I D : 2A R DS(ON) :0.24Ω 1 2 3 SAMWIN Item Sales Type Marking Package Packaging 1 SW E 2N10 SW2N10 SOT-23 RELL Order Codes Symbol Parameter Value Unit V DSS Drain to Source Voltage 100 V I D Continuous Drain Current (@T C=25 oC) 2* A Continuous Drain Current (@T C=100 oC) 1.26* A I DM Drain current pulsed (note 1) 8 A V GS Gate to Source Voltage ± 15 V E AS Single pulsed Avalanche Energy (note 2) 64 mJ E AR Repetitive Avalanche Energy (note 1) 5 mJ dv/dt Peak diode Recovery dv/dt (note 3) 5 V/ns T STG, TJ Operating Junction Temperature & Storage Temperature -55 ~ + 150 oC T L Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. 300 oC General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply. *. Drain current is limited by junction temperature. 1. Gate 2. Source 3. Drain 1 2 3 SOT-23 SW2N10 |
Numéro de pièce similaire - SW2N10 |
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Description similaire - SW2N10 |
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