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SSF5506 Fiches technique(PDF) 3 Page - Silikron Semiconductor Co.,LTD.

No de pièce SSF5506
Description  Advanced MOSFET process technology
PDF  8 Pages
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Fabricant  SILIKRON [Silikron Semiconductor Co.,LTD.]
Site Internet  http://www.silikron.com
Logo SILIKRON - Silikron Semiconductor Co.,LTD.

SSF5506 Fiches technique(HTML) 3 Page - Silikron Semiconductor Co.,LTD.

  SSF5506 Datasheet HTML 1Page - Silikron Semiconductor Co.,LTD. SSF5506 Datasheet HTML 2Page - Silikron Semiconductor Co.,LTD. SSF5506 Datasheet HTML 3Page - Silikron Semiconductor Co.,LTD. SSF5506 Datasheet HTML 4Page - Silikron Semiconductor Co.,LTD. SSF5506 Datasheet HTML 5Page - Silikron Semiconductor Co.,LTD. SSF5506 Datasheet HTML 6Page - Silikron Semiconductor Co.,LTD. SSF5506 Datasheet HTML 7Page - Silikron Semiconductor Co.,LTD. SSF5506 Datasheet HTML 8Page - Silikron Semiconductor Co.,LTD.  
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SSF5506 
©Silikron Semiconductor CO.,LTD.
2013.08.13
Version : 1.1
page 3 of 8
www.silikron.com
 
Test circuits and Waveforms
EAS Test Circuit:
Gate charge test circuit:
Switching Time Test Circuit:
Switching Waveforms:
Notes
: 
①
Calculated continuous current based on maximum allowable junction temperature.
Repetitive rating; pulse width li
②
mited by max. junction temperature.
③
The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
④
The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C



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