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HAT2016R Fiches technique(PDF) 8 Page - Hitachi Semiconductor

No de pièce HAT2016R
Description  Silicon N Channel Power MOS FET High Speed Power Switching
PDF  10 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricant  HITACHI [Hitachi Semiconductor]
Site Internet  http://www.renesas.com/eng
Logo HITACHI - Hitachi Semiconductor

HAT2016R Fiches technique(HTML) 8 Page - Hitachi Semiconductor

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HAT2016R
8
Pulse Width PW (S)
Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation)
10
µ
100
µ
1 m
10 m
100 m
1
10
100
1000
1000
10
1
0.1
0.01
0.001
0.0001
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1shot
pulse
DM
P
PW
T
D =
PW
T
ch – f(t) = s (t) •
ch – f
ch – f = 125
°C/W, Ta = 25 °C
θ
γ
θ
θ
When using the glass epoxy board
(FR4 40x40x1.6 mm)
10
µ
100
µ
1 m
10 m
100 m
1
10
100
1000
1000
Pulse Width PW (S)
Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation)
10
µ
100
µ
1 m
10 m
100 m
1
10
100
1000
1000
10
1
0.1
0.01
0.001
0.0001
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1shot
pulse
DM
P
PW
T
D =
PW
T
ch – f(t) = s (t) •
ch – f
ch – f = 166
°C/W, Ta = 25 °C
θ
γ
θ
θ
When using the glass epoxy board
(FR4 40x40x1.6 mm)



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