IXYS reserves the right to change limits, test conditions, and dimensions.

IXGP 30N60B2

IXYS MOSFETs and IGBTs are covered by one or more

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025

6,404,065B1 6,162,665

6,534,343

6,583,505

of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

6,306,728B1

6,259,123B1 6,306,728B1 6,683,344

Fig. 7. Transconductance

0

5

10

15

20

25

30

35

40

45

0

25

50

75

100 125 150 175 200 225 250

I

25ºC

125ºC

Fig. 8. Dependence of Turn-Off

Energy on R

G

0

0.3

0.6

0.9

1.2

1.5

1.8

2.1

2.4

2.7

0

102030

40

506070

80

R

Fig. 9. Dependence of Turn-Off

Energy on I

C

0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

2

10

15

20

25

30

35

40

45

50

I

Fig. 10. Dependence of Turn-Off

Energy on Tem perature

0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

2

25

35

45

55

65

75

85

95

105 115 125

T

Fig. 11. Dependence of Turn-Off

Sw itching Tim e on R

G

100

200

300

400

500

600

700

0

10

2030

40

506070

80

R

t

d(off)

t

Fig. 12. Dependence of Turn-Off

Sw itching Tim e on I

C

60

80

100

120

140

160

180

200

220

240

260

10

15

20

25

30

35

40

45

50

I

t

d(off)

t

fi

- - - - - -