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2SH21 Fiches technique(PDF) 1 Page - Hitachi Semiconductor

No de pièce 2SH21
Description  Silicon N-Channel IGBT
PDF  8 Pages
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Fabricant  HITACHI [Hitachi Semiconductor]
Site Internet  http://www.renesas.com/eng
Logo HITACHI - Hitachi Semiconductor

2SH21 Fiches technique(HTML) 1 Page - Hitachi Semiconductor

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Application
High speed power switching
Features
• High speed switching
• Low on saturation voltage
Table 1 Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
———————————————————————————————————————————
Collector to emitter voltage
VCES
600
V
———————————————————————————————————————————
Gate to emitter voltage
VGES
±20
V
———————————————————————————————————————————
Collector current
IC
50
A
———————————————————————————————————————————
Collector peak current
ic(peak)
100
A
———————————————————————————————————————————
Collector dissipation
PC*
150
W
———————————————————————————————————————————
Channel temperature
Tj
150
°C
———————————————————————————————————————————
Storage temperature
Tstg
–55 to +150
°C
———————————————————————————————————————————
* Value at Tc = 25°C
1. Gate
2. Collector
3. Emitter
TO–3P
1
2
3
1
2
3
1
2SH21
Silicon N-Channel IGBT
1st. Edition
Feb. 1995
ADE–208–294 (Z)


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