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SD103C Fiches technique(PDF) 1 Page - General Semiconductor

No de pièce SD103C
Description  Schottky Diodes
PDF  3 Pages
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Fabricant  GE [General Semiconductor]
Site Internet  http://www.vishay.com
Logo GE - General Semiconductor

SD103C Fiches technique(HTML) 1 Page - General Semiconductor

  SD103C Datasheet HTML 1Page - General Semiconductor SD103C Datasheet HTML 2Page - General Semiconductor SD103C Datasheet HTML 3Page - General Semiconductor  
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FEATURES
Schottky Diodes
MECHANICAL DATA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
DO-35
max. ∅
Cathode
.020 (0.52)
Mark
max. ∅.079 (2.0)
Dimensions in inches and (millimeters)
Case: DO-35 Glass Case
Weight: approx. 0.13 g
4/98
SD103A THRU SD103C
Symbol
Value
Unit
Peak Inverse Voltage
SD103A
SD103B
SD103C
VRRM
VRRM
VRRM
40
30
20
V
V
V
Power Dissipation (Infinite Heat Sink)
Ptot
4001)
mW
Single Cycle Surge
60 Hz Sine Wave
IFSM
15
A
Junction Temperature
Tj
1251)
°C
Storage Temperature Range
TS
–55 to +1501)
°C
1) Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature
For general purpose applications.
The SD103 series is a metal-on-silicon
Schottky barrier device which is protected
by a PN junction guard ring. The low forward
voltage drop and fast switching make it ideal for
protection of MOS devices, steering, biasing, and
coupling diodes for fast switching and low logic level
applications. Other applications are click suppression,
efficient full wave bridges in
telephone subsets, and blocking diodes in
rechargeable low voltage battery systems.
This diode is also available in MiniMELF case with the
type designation LL103A … LL103C and SOD-123 case
with the type designations SD103AW .. SD103CW.


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