BAS20 datasheet(2/3 Pages) GE

2 / 3 page

ELECTRICAL CHARACTERISTICS

Ratings at 25 °C ambient temperature unless otherwise specified

BAS19, BAS20, BAS21

Symbol

Min.

Typ.

Max.

Unit

Forward Voltage

at IF = 100 mA

at IF = 200 mA

–

1.0

1.25

Leakage Current

at VR = VRmax

at VR = VRmax; Tj = 150 °C

–

100

µA

Dynamic Forward Resistance

at IF = 10 mA

–5–

Ω

Capacitance

at VR = 0, f = 1 MHz

Ctot

––5pF

Reverse Recovery Time (see figures)

from IF = 30 mA through IR = 30 mA to IR = 3 mA,

RL = 100 Ω

trr

––50

Thermal Resistance Junction to Ambient Air

RthJA

–

4302)

K/W

2) Device on fiberglass substrate, see layout.

Layout for RthJA test

Thickness: Fiberglass 0.059 in (1.5 mm)

Copper leads 0.012 in (0.3 mm)

.59 (15)

0.2 (5)

.03 (0.8)

.30 (7.5)

.12 (3)

.04 (1)

.06 (1.5)

.20 (5.1)

.08 (2)

.04 (1)

Dimensions in inches (millimeters)

.47 (12)

BAS20 Fiches technique(PDF) 2 Page - General Semiconductor

BAS20 Fiches technique(HTML) 2 Page - General Semiconductor

Html Pages

1 2 3

Fiches technique Télécharger

Lien URL