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RH0165F Fiches technique(PDF) 2 Page - Solid States Devices, Inc |
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RH0165F Fiches technique(HTML) 2 Page - Solid States Devices, Inc |
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2 / 2 page ![]() ELECTRICAL CHARACTERISTICS Symbol Max Unit Instantaneous Forward Voltage Drop (IF = 20Adc, 500 μsec Pulse, TA= 25 oC) VF1 1.05 Vdc Instantaneous Forward Voltage Drop (IF = 20Adc, 300 μsec Pulse, TA= -65 oC) VF2 1.2 Vdc Reverse Leakage Current (Rated VR, 300 μsec Pulse Minimum, TA= 25 oC) IR1 100 μA Reverse Leakage Current (Rated VR, 300 μsec Pulse Minimum, TA= 100 oC) IR2 10 mA Junction Capacitance (VR =10 VDC, f = 1MHz, TA = 25 oC) CJ 350 pF Reverse Recovery Time (IF = 0.5A, IR = 1.0 A, IRR = 0.25A, TA = 25 oC) trr 40 nsec CASE OUTLINES: Axial ( ) TOLERANCES (UNLESS SPECIFIED) .XX ± .03” .XXX ± .010” Square Tab (SMS) Button (BTR) Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SRM3HF thru SRM4HF Series NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: RH0165F DOC |
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