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MB84VB2000 Fiches technique(PDF) 18 Page - fujitsu semiconductor

No de pièce MB84VB2000
Description  8M (x 8/x 16) FLASH MEMORY & 8M (x 8/x 16) FLASH MEMORY
PDF  28 Pages
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Fabricant  FUJITSU [fujitsu semiconductor]
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Logo FUJITSU - fujitsu semiconductor

MB84VB2000 Fiches technique(HTML) 18 Page - fujitsu semiconductor

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18
MB84VB2000-10/MB84VB2001-10
CE
OE
WE
tCP
tWHWH1
tWC
tAH
Addresses
Data
tAS
tCPH
tDH
DQ7
A0H
DOUT
555H
PA
PA
Data Polling
3rd Bus Cycle
tWS
tWH
tGHEL
PD
tDS
Notes: 1.PA is address of the memory location to be programmed.
2.PD is data to be programmed at byte address.
3.DQ7 is the output of the complement of the data written to the device.
4.DOUT is the output of the data written to the device.
5.Figure indicates last two bus cycles out of four bus cycle sequence.
6.These waveforms are for the
×16 mode. (The addresses differ from ×8 mode.)
Figure 4
Alternate CE Controlled Program Operation Timings
Data Polling
DQ7
CE
OE
WE



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