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LP8501 Fiches technique(PDF) 2 Page - Texas Instruments |
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LP8501 Fiches technique(HTML) 2 Page - Texas Instruments |
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2 / 8 page ![]() LP8501 D1 D2 D4 D7 VOUT COUT 1 PF C2 0.47 PF VDD1_6 VDD7_9 GND TRIG INT CIN 1 PF VIN = 2.7V TO 5.5V VDD C1 0.47 PF C1+ C1- C2+ C2- GPO B G R D3 D8 B G R B G R D6 D5 D9 MCU SCL SDA EN CLK VOUT LP8501 SNVS548B – SEPTEMBER 2008 – REVISED NOVEMBER 2008 www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. Typical Application 2 Submit Documentation Feedback Copyright © 2008, Texas Instruments Incorporated Product Folder Links: LP8501 |
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